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Hindi Research Article, J Nanomater Mol Nanotechnol Vol: 5 Issue: 2
Electrical Transport Mechanism in Au Modified Nano Porous Silicon
| Jayoti Das1*, Subhasish Pradhan2 and Syed Minhaz Hossain3 | |
| 1Department of Physics, Jadavpur University, Kolkata-700 032, India | |
| 2Department of Engineering Physics, B.P. Poddar Institute of Management and Technology, 137 VIP Road, Kolkata-700 052, India | |
| 3Department of Physics, Indian Institute of Engineering Science and Technology, Shibpur, Howrah-711 103, India | |
| Corresponding author : Jayoti Das Department of Physics, Jadavpur University, Kolkata-700 032, India, Tel: +91 33 2414 6666; Extn. 2877; Fax: +91 33 2414 6414, E-mail: jayoti.das@gmail.com |
|
| Received: January 28, 2016 Accepted: April 04, 2016 Published: April 09,2016 | |
| Citation: Das J, Pradhan S, Hossain SM (2016) Electrical Transport Mechanism in Au Modified Nano Porous Silicon. J Nanomater Mol Nanotechnol 5:2.doi:10.4172/2324-8777.1000180 |
Abstract
Electrical Transport Mechanism in Au Modified Nano Porous Silicon
Nano porous silicon (PS) has drawn considerable attention as a potential material for different sensors and other device applications. A metal modified PS can be of certain scientific and practical interest in order to control its high intrinsic resistivity and current transport through it to make it an efficient electronic device material. We present here a study on the electrical transport in Au-modified nano PS layers obtained by anodic etching of p-Si with in-situ Au nano-particle incorporation from the dissolved Au salt in the etching solution. The current-voltage characteristics of the resulting Au-modified PS layers have been studied with reference to the unmodified PS layers. The results suggest that direct tunnelling is the dominating charge transport mechanism in Au-modified PS layers. With the increasing Au concentration, electrical transport mechanism deviates slowly from the hopping type in low applied field, Poole-Frenkel type in moderate applied field and Fowler-Nordheim type in high applied field range as observed in case of un-modified PS layers.
