Growth of Multilayer Graphene by Chemical Vapor Deposition (CVD) and Characterizations

Growth of Multilayer Graphene by Chemical Vapor Deposition (CVD) and Characterizations

Graphene with the nanostructured configuration has proved to be a potential material for its versatile applications in different areas of science and technology. Growth of single layer graphene is a real challenge but recently few layers and multilayer graphene have also proved to be very useful. In the present investigation, thermal CVD method was employed to grow multilayer graphene thin film by the decomposition of Methane (CH4) mixed with high purity hydrogen in the ratio CH4:H2:N2=15:5:300 (in SCCM) at 1000°C and at atmospheric pressure using copper (Cu) catalytic film deposited on thermally oxidized silicon substrate.